By Dawon Kahng
Silicon built-in Circuits, half 2 covers one of the most promising methods besides the hot knowing of processing-related components of physics and chemistry. the 1st bankruptcy is set the temporary thermal processing of silicon, together with annealing with directed-energy beams and quick isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; speedy isothermal annealing; and several other functions stemming from swift annealing and semiconductor processing with directed-energy beams. the second one bankruptcy is worried with using electron cyclotron resonance plasmas in very important fabrics processing concepts: reactive ion-beam etching and plasma deposition. The final bankruptcy of the booklet bargains with the exploding zone of very huge scale integration processing and strategy simulation. Physicists, chemists, and engineers concerned with silicon built-in circuits will locate the publication helpful.
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T o use RTA one must obtain very good temperature uniformity and avoid degassing of the surfaces (loss of phosphorus) with vacuum environments. The industry is developing the use of b o r o n - p h o s p h o r u s silicate glass (BPSG), which flows at lower temperatures, ~ 9 0 0 - 1 0 0 0 ° C . This may obviate the need for using RTA to flow the glass. , as a sodium barrier), then there may be no need for a short high-temperature RTA. However, one should keep in mind that the inherently clean RTA environ ment may prove to be attractive near the end of process in order to avoid junction degradation by contaminants.
CELLER A N D Τ. Ε. SEIDEL of point defects and dislocations that represent carrier traps or precipitation 95 sites and the placement of dopant atoms on substitutional s i t e s . 14 2 When they are implanted above ^ 1 0 / c m into r o o m temperature targets, P, As, or Sb produce amorphous layers over most of the d o p a n t depth distribution. The dopant activation is then obtained mainly by the S P E recrystallization process. Activation is usually indicated by Hall or resistivity measurements that average the active concentration over the profile.
TRANSIENT THERMAL PROCESSING OF SILICON 53 ture, one is tempted to discard the idea of transient-enhanced diffusion of arsenic associated with RTA. There is some experimental disagreement in the case of arsenic, but general agreement exists for a transient-tail diffusion of boron. The tail was produced by channeling during implantation. The question of enhanced early time transient diffusion may be very important in practical applications. If early time diffusions 1 sec) were vastly enhanced, we would not be able to take advantage of a potentially important property of RTA, namely, the control of shallow junction depths.