Electrical Conductivity II / Elektrische Leitungsphänomene by O. Madelung, A. B. Lidiard, J. M. Stevels, E. Darmois

By O. Madelung, A. B. Lidiard, J. M. Stevels, E. Darmois

Sect. 1. 247 we've got already acknowledged that the topic of ionic conductivity should be safely considered as one a part of the broader learn of imperfections, and it really is because of the coherence and cohesion of this wider topic that ionic conductors gather their curiosity [4J. hence the tips of cellular interstitial atoms and vacant lattice websites are proper to quite a lot of phenomena; for instance diffusion in solidsl, chemical reactions among solids and among asolid and agas (e. g. tarnish three ing reactions) 2, and annealing of radiation harm . There are, after all, imper fections comparable to dislocations whose houses can't be studied to any nice quantity via ionic conductivity measurements. but the life of fees at the ions and the absence of digital conduction permits the professional perties and focus of the straightforward localised lattice defects to be studied with better simple task and extra directness than is feasible in, say, metals. this can be actual of the unique improvement of the idea of lattice defects by means of FRENKEL [2J, SCHOTTKY [3J, [5J and WAGNER [5J, and is additionally actual this day. examples should be pointed out. to begin with the diffusion of impurity atoms in met als may well occasionally contain the formation of quite reliable pairs shaped from an impurity atom and a vacan cy [6]. In NaCl (an ionic conductor), such pairs are conveniently shaped among a 2 Na+ emptiness and a substitutionally dissolved multivalent impurity ion, e. g.

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ZIEGLER: Z. Naturforsch. 9a, 561 (1954). - P. H. KECK: Physica, Haag 20,1059 (1954). - W. HEYWANG: Z. Naturforsch. 11a, 238 (1956). 4 R. N. HALL: Phys. Rev. 88, 139 (1952). J. Phys. ehern. 57, 836 (1953). 5 G. K. TEAL U. J. B. LITTLE: Phys. Rev. 78, 647 (1950). G. K. TEAL, M. SPARKS u. E. BUEHLER: Phys. Rev. 81, 637 (1951) und Proc. a. 26 o. MADELUNG: Halbleiter. Ziff. 11. Ziehens den Störstellengehalt der Schmelze ändern kann und damit der Einkristall eine vorgegebene Störstellenverteilung erhält.

D. KOLB: Phys. Rev. 87, 527 (1952). K. SEILER, D. GEIST, K. KELLER u. K. BLANK: Naturwiss. 40, 56 (1953). - G. FINN: Phys. Rev. 91, 754 (1953). 3 F. VAN MAESEN, P. PENNING u. A. VAN WIERINGEN: Phil. Res. Rep. 8, 241 (1953). 4 R. A. LOGAN: Phys. Rev. 91, 757 (1953). S. MAYBURG u. L. ROTONDI: Phys. Rev. 91,1015 (1953). - S. MAYBURG: Phys. Rev. 95, 38 (1954). - R. A. LOGAN: Phys. Rev. 101, 1455 (1956). 5 K. 47. - H. M. JAMES u. K. LARK-HOROVITZ: Z. phys. Chern. 198,107 (1951). - J. W. CLELAND, J. H.

KEDESDY, A. MAC DONALD U. A. PETERSEN: BuH. Amer. Phys. Soc. 30, No. 1, Q 13 (1955). 2 E. BILLIG, U. M. S. RIDEOUT: Nature, Land. 173, 496, (1954). Ziff. 14. O. MADELUNG: Halbleiter. 32 Fällen die FERMI-Statistik durch die BOLTZMANN-Statistik ersetzt werden kann, was eine wesentliche Vereinfachung der Theorie bildet (nichtentartete Halbleiter). Zur Bestimmung der Verteilungsfunktion wird üblicherweise das zu untersuchende System in "Sammelzellen" k eingeteilt, welche Z,. Besetzungszustände (fast) gleicher Energie E,.

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