By Sokrates T. Pantelides (Eds.)
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Extra resources for The Physics of Si: O2 and its Interfaces. Proceedings of the International Topical Conference on the Physics of Si: O2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22–24, 1978
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In conclusion, these experiments seem to provide strong evidence for exciton transport in Si0 2 · They give novel information about excitonic states beyond what is usually inferred from optical data and band structure calculations. ACKNOWLEDGMENT The authors are grateful to E. Bassous for his cooperation in this work and appreciate illuminating discussions with D. Emin, R. C. Hughes, and N. F. Mott. In particular we are grateful for D. Emin's suggestion about triplet excitons. REFERENCES * 1. 2.
Theory is scaled to data at highest field point. 54 Further evidence for the bandtail model is obtained from an analysis of the photon assisted tunneling curves from another sample in which no annealing steps were performed after the oxide was grown. 25 eV. A broader band tail is qualitatively expected for unannealed samples when the band tail is a consequence of the disorder in the material. Table 1 shows the results of this type of analysis on a series of samples which underwent various annealing treatment.
2, 35 (1961). 34 (14) 6. A. Baraff, Distribution function and ionization rates of hot electrons, Phys. Rev. 128, 2507 (1962). (15) L. V. Keldysh, Concerning the theory of impact ionization in ionic semiconductors, Zh. Eksperim i Teor. Fiz. 48, 1962 (1965) [Sov. JETP 21, 1135 (1965)]. (16) W. P. Dumke, Theory of avalanche breakdown in InSb and InAs, Phys. Rev. 167, 783 (1968). (17) D. K. Ferry, Impact ionization in silicon dioxide, Sol. State Commun. 18, 1051 (1976). (18) Y. Okuto and C. R. Crowell, Ionization coefficients in semiconductors: a nonlocalized property, Phys.