By Ben G. Streetman
Read or Download Solutions Manual to Solid State Electronic Devices, 6th Edition PDF
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Additional info for Solutions Manual to Solid State Electronic Devices, 6th Edition
Sample text
0 The Debye length varies from 7 to 12 percent of W across this doping range. Prob. 28 For the given symmetric p-n Si junction, find the reverse breakdown voltage. 6-10-19C-1017JT •8 q-N a Prob. 29 The current in a long p+-n diode is tripkd mt t= 0, (a) What i$ the slope of£p(zn = 0) ? The sbpe triples at t = 0 : dl = -qADP dSp dXit *«i«0 The slope h = -31/qADp «R,=0 (h) Rehte V(i = oo) to V(t« 0"). CaU V the voltage before I *= 0, Call F°° the voltage at t = oo. 0285 Prob. 30 Find the stored charge Qp as a function of time in the n-region if a long p+-n forward bias current is switchedfrom IFI to Ip2 at t = 0.
6-10"iyC 10,15 _ 1 ! 026V = 3 8 . 001cm ) - ( 4 . 2-10"JA Most of the current is carried by electrons because Na is less than Nd. To double the electron current, halve the acceptor doping. Prob. 20 Find the totalforward bias junction capacitance and reverse bias electric field. For n + - p in reverse bias, c = ^ 5 . = A. 6-10- C-250^-10 A cm 19 cm V-s 16 cm3 cm (-2V) Prob. 21 In ap+- n junction with n-doping changedfrom Nd to 2N& describe the changes in junction capacitance, built-in potential, breakdown voltage, and ohmic losses.
1-10 4 V/cm Prob. 11 Describe the effect on the hole diffusion current of doubling thep doping. The depletion edge and electron diffusion current on the p + side may be ignored and Lp = ^D p -x p = ^ 2 0 ^ - 5 0 - 1 0 ^ = 10"3cm = lOum ( & Sp=^. \ >kT, J N d(5p)_ 1 n,22 f qV e kT -l , dx L„ N V J d(6p) J (diffusion) = - q • D dx e y = . 609 -10"yC -20^ - 8 . 6 - 1 0 ^ - ½ = 0 . 2 7 7 ^ cm cm + Since this is independent of the p doping, there will be no change. Prob. 5V. e» = q . A . 55jlA Prob.