Zinc Oxide - A Material for Micro- and Optoelectronic by N. Nickel, E. Terukov

By N. Nickel, E. Terukov

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2. C. Look and B. Claflin, phys. stat. sol. (b) 241, 624 (2004). 3. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989). 4. B. R. Nag, Electron Transport in Compound Semiconductors (Springer, Berlin, 1980). 5. F. Tuomisto, K. Saarinen, and D. C. Look, Phys. Rev. Lett. 91, 205502 (2003). 6. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002). 46 David C. Look et al. 7. N. Y. Garces, L. Wang, N.

3. In general, the Hall mobility of the thin films is lower Electrical properties of ZnO thin films and single crystals 51 Figure 3. Dependence of the Hall mobility on the free electron concentration. than expected by considering intrinsic scattering mechanisms and ionized impurity scattering only. The reason is grain boundary scattering, which occurs at potential barriers at the grain walls. The potential barriers arise from the occupation of acceptor states at the grain walls leading to depletion zones around these walls.

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