Quantum Dots - A Variety of New Applns. [appl. physics] by A. Al-Ahmadi

By A. Al-Ahmadi

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Luminescence and Amplified Stimulated Emission in CdSe–ZnSNanocrystal-Doped TiO2 and ZrO2 Waveguides. Advanced Functional Materials Vol. 17, N. 10, pp. 1654-1662, ISSN 1616-301X. ; Zhanpeisov, N. ; Baba, Y. & Ishikawa, M. (2006a). Structure Property Correlation of CdSe Clusters Using Experimental Results and FirstPrinciples DFT Calculations. Journal of the American Chemical Society, Vol. 128, N. 2, pp. 629-636, ISSN 0002-7863. ; Baba, Y. & Ishikawa, M. (2006b). White-light-emitting CdSe Quantum Dots Synthesized at Room Temperature.

1016/S0022-0248(01)01675-X Kim, J. , Lee, J. , Hong, S. , Han, W. , Lee, C. , & Oh D. K. (2003). Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures. Journal of Applied Physics, Vol. 94, No. 10, (November 2003), pp. , & Nishino T. (2000). Self-assembled growth of InAs-quantum dots and postgrowth behavior studied by reflectance-difference spectroscopy. Appied Surface Scence, Vol. 159, (June 2000) pp. , & Richter. W. (1997). In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers.

The structure was grown by molecular beam epitaxy. More than one quantum dot layer are required in lasers to increase the gain. In such a case the capping layer serves also as a separating layer between two quantum dot layers. During the growth of the separation layers, surfactant atoms like In have to be removed from epitaxial surface, so that the In is not transported from one quantum dot layer to the following one. Different types of In flushing method during the growth of capping layers and their importance are discussed at the end of the chapter in section 4.

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