By I. Buyanova, W. Chen
On account that their improvement within the Nineteen Nineties, it's been stumbled on that diluted nitrides have interesting houses that aren't basically exact from these of traditional semiconductor fabrics, but additionally are conducive to varied functions in optoelectronics and photonics. The ebook examines those functions and offers a large and in-depth examine the fundamental digital and optical homes of diluted nitrides. the purpose of Physics and purposes of Diluted Nitrides is to supply graduate scholars, researchers and engineers with a accomplished evaluation of the current wisdom and destiny views of diluted nitrides. Co-authored by way of a gaggle of prime scientists within the box, this ebook brings the reader on top of things at the improvement and present nation of diluted nitride functions, in addition to the applied sciences to be built within the close to destiny.
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Extra resources for Physics and Applications of Dilute Nitrides (Optoelectronic Properities of Semiconductors and Superlattices, 21)
Example text
10 are in good agreement with the experimental data. 28 m0 at 70 kbar. This can be compared with a less than 30% change in the effective mass if a linear change, me(P)≈me(0)E0(P)/E0(0) for the conventional alloys such as AlGaAs [48], is used. 3 Effects of the Higher Conduction-Band Minima Alternative interpretations of some of the observed effects discussed above, such as the appearance of E+ transition and the pressure dependence of the E− and E+ transitions, were also proposed [49–56]. For instance, it has been argued that the observed changes in the conduction band structure are a result of interactions between states originating from the extended states of the Γ, L, and/or X conduction-band minima.
Most of the samples for the spectroscopic studies discussed below were grown by either metalorganic vaporphase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source or gas-source molecular-beam epitaxy (MBE) using an RF plasma nitrogen-radical beam source. The nitrogen contents in those samples were determined using secondary-ion mass spectroscopy (SIMS) and indirectly from the change of the lattice constant measured by reflection [0,0,4] double-crystal X-ray diffraction. The AlGaNAs and some InNP samples were also synthesized using N+ implantation [39–41].
59. , “Photoluminescence of Nitrogen-Doped VPE GaAs,” Solid State Commun. 55:167–173 (1985). 60. 3),” Appl. Phys. Lett. 70:2984–2986 (1997). 61. , “Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE,” Jpn. J. Appl. Phys. 36: 1694–1697 (1997). 62. , “Photoluminescence Characteristics of Nitrogen Atomic-Layer-Doped GaAs Grown by MOVPE,” J. Crystal Growth 170: 372–376 (1997). 63. , “Optical Spectroscopic Studies of N-Related Bands in Ga(N,As),” Phys. Stat.