By Sneh Saurabh, Mamidala Jagadesh Kumar
During the decade, there was loads of curiosity in TFETs. To the easiest authors’ wisdom, no ebook on TFETs at present exists. The proposed booklet offers readers with basic knowing of the TFETs. It explains the attention-grabbing features of the TFETs, pointing to their strengths and weaknesses, and describes the unconventional options that may be hired to beat those weaknesses and increase their features. various tradeoffs that may be made in designing TFETs have additionally been highlighted. additional, the ebook presents simulation instance documents of TFETs which may be run utilizing a advertisement machine simulator.
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Extra resources for Fundamentals of Tunnel Field-Effect Transistors
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2010. [13] Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor. , 2011. [14] S. M. Sze, Physics of Semiconductor Devices. , 1981. [15] D. A. Neaman, Semiconductor Physics and Devices. , 2002. 24 Fundamentals of Tunnel Field-Effect Transistors [16] A. Chaudhry and M. J. Kumar, “Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: A review,” IEEE Transactions on Device and Materials Reliability, vol. 4(1), pp. 99–109, 2004. [17] F. ” https://www.
As a result, researchers regularly employ numerical simulators to investigate the behavior of the TFETs. Since tunneling is a quantum mechanical phenomenon, rigorous quantum transport computational methods give a precise result. Therefore, rigorous quantum transport formalism, like the nonequilibrium Green’s function (NEGF), are important for simulating TFETs especially at small device dimensions. Various researchers have employed rigorous quantum treatment to compute the tunneling current in TFETs [7–19].
Cline, G. Yeric, V. Chandra, and Y. Cao, “Design benchmarking to 7 nm with FinFET predictive technology models,” in Proceedings of the 2012 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED ’12, (New York, NY, USA), pp. 15–20, ACM, 2012. [37] H. Esmaeilzadeh, E. Blem, R. S. Amant, K. Sankaralingam, and D. Burger, “Power challenges may end the multicore era,” Communications of the ACM, vol. 56, pp. 3–102, Feb. 2013. net. [39] A. Chen, “Emerging research device roadmap and perspectives,” IEEE International Conference on IC Design and Technology (ICICDT), pp.