Electron-Beam Technology in Microelectronic Fabrication by George R. Brewer

By George R. Brewer

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02 J / c m . T h e 18 k W source is a s s u m e d to p r o d u c e a flux at the resist, after passing through a typical mask, of 0 . 1 5 / D W / c m w h e r e D is the source-to-mask distance in cm. 25 μπι ( ± 0 . 1 3 μπι) at the edge of the 3 in. wafer. F o r linewidths greater than 1 μπι the source can be m o v e d closer to the m a s k ; therefore, the e x p o s u r e time is proportional to t h e inverse square of the linewidth. H o w e v e r , decreasing the source-to-mask distance increases the amount of geometric distortion and degrades the resolution, unless the mask-to-wafer gap is also r e d u c e d .

A c h i e v e m e n t of the minimum sized bipolar device, h o w e v e r , is not directly aided by higher resolution surface features; d o p a n t depth control must also be i m p r o v e d . K l a a s s e n (1978) provides scaling rules for M O S and P L d e v i c e s . , mobility. F r o m simple carrier transit time and c a p a c i t a n c e c o n s i d e r a t i o n s , the m a x i m u m frequency of an F E T (proportional to inverse minimum propagation delay) should vary as the gate length L.

In some cases the published data has been extrapolated (by area) to a 3 in. wafer size. T h e history of electron-beam machine development is shown by the d e c r e a s e in e x p o s u r e time for the diamond s y m b o l s ; the upper points are circa 1976. T h e design of more recent machines has emphasized speed more strongly; these are r e p r e s e n t e d by the lower points. Although Fig. 18 shows only published data, several of these machines will e x p o s e lines that are considerably n a r r o w e r than the data point indicates.

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